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| DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor Product specification May 1989 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation. PIN CONFIGURATION FEATURES * internal input matching capacitor for a high power gain * gold metallization ensures excellent reliability The transistor has a 4-lead studless envelope with a ceramic cap (SOT122D). All leads are isolated from the mounting base. PINNING 1 = collector 2 = emitter 3 = base 4 = emitter Fig.1 Simplified outline, SOT122D. 2 MSB055 BLT92/SL QUICK REFERENCE DATA RF performance at Tmb = 25 C in a common-emitter class-B circuit MODE OF OPERATION CW (class-B) VCE (V) 7.5 f (MHz) 900 PL (W) 3.0 Gp (dB) > 7.0 C (%) > 50 handbook, halfpage 4 1 3 PRODUCT SAFETY This device incorporates beryllium oxide (BeO), the dust of which is toxic. The device is entirely safe provided that the internal BeO disc is not damaged. May 1989 2 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current DC or average (peak value); f > 800 MHz Total power dissipation at Tamb < 120 C; f > 800 MHz Storage temperature range Operating junction temperature THERMAL RESISTANCE Dissipation = 10 W; Tmb = 25 C From junction to mounting base (f > 800 MHz) Rth j-mb(RF) max. Ptot Tstg Tj max. max. IC; IC(AV) ICM max. max. VCBO VCEO VEBO max. max. max. BLT92/SL 20 V 10 V 3.0 V 1.2 A 3.6 A 10 W 200 C -65 to +150 C 6.0 K/W handbook, halfpage 20 MDA297 Ptot (W) 16 (1) 12 (2) 8 4 0 0 40 80 120 160 200 Tmb (C) (1) Short-time RF operation during mismatch (f > 800 MHz). (2) Continuous RF operation (f > 800 MHz). Fig.2 Total power dissipation as a function of temperature. May 1989 3 Philips Semiconductors Product specification UHF power transistor CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 10 mA Collector-emitter breakdown voltage open base; IC = 20 mA Emitter-base breakdown voltage open collector; IE = 2 mA Collector cut-off current VBE = 0; VCE = 10 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 DC current gain IC = 600 mA; VCE = 5 V Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 7.5 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 7.5 V Collector-mounting base capacitance Cre Cc-mb typ. typ. Cc typ. hFE > ESBR > ICES < V(BR)EBO > V(BR)CEO > V(BR)CBO > BLT92/SL 20 V 10 V 3.0 V 5.0 mA 1.0 mJ 25 11 pF 6.0 pF 1.2 pF handbook, halfpage 24 MDA298 Cc (pF) 16 8 0 0 2 4 6 8 10 VCB (V) Fig.3 Collector capacitance as a function of collector-base voltage; f = 1 MHz; IE = ie = 0; typical values. May 1989 4 Philips Semiconductors Product specification UHF power transistor APPLICATION INFORMATION RF performance in CW operation (common-emitter circuit; class-B); f = 900 MHz; Tmb = 25 C MODE OF OPERATION VCE (V) 7.5 PL (W) 3.0 > typ. Gp (dB) 7.0 8.5 BLT92/SL C (%) > typ. 50 57 Class-B; CW handbook, full pagewidth 50 ,,,,,,,, ,,,,,,, ,,,,,,,, ,,,,,,, L1 C4 L2 L3 D.U.T. L4 C5 L5 C6 C9 L6 C1 C2 C3 C7 C8 C10 L7 L8 L10 R1 L9 C12 R2 C13 C14 C11 50 +VCC MDA299 Fig.4 Class-B test circuit at f = 900 MHz. List of components: C1 C3 C4 C11 L1 L2 L3 L5 L6 L7 L8 L9 R1 = C2 = C8 = C10 = 1.4 to 5.5 pF film dielectric trimmer (cat. no. 2222 809 09001) = C6 = C7 = 3.3 pF multilayer ceramic chip capacitor(1) = C5 = C9 = 5.6 pF multilayer ceramic chip capacitor(1) = C12 = C13 = 180 pF multilayer ceramic chip capacitor = 50 stripline (25 mm x 2.4 mm) = 50 stripline (11 mm x 2.4 mm) = L4 = 25 stripline (11.5 mm x 6.0 mm) = 50 stripline (7.0 mm x 2.4 mm) = 50 stripline (27.0 mm x 2.4 mm) = 4 turns closely wound enamelled Cu wire (0.4 mm), int. dia;. 3 mm, with ferrite beat (cat. no. 4330 830 32221) over the coldside lead = 1 turn Cu wire (1.0 mm); int. dia. 5.5 mm; length 2 mm; leads 2 x 5 mm = L10 = Ferroxcube wideband HF choke, grade 3B (cat. no. 4312 020 36642) = R2 = 10 5%; 0.25 W metal film resistor C14 = 1 F (35 V) tantalum capacitor The striplines on a double Cu-clad printed circuit board with PTFE fibreglass dielectric (r = 2.2); thickness 1/32 inch; thickness of copper-sheet 2 x 35 m. Note 1. American Technical Ceramics capacitor type 100 A or capacitor of same quality. May 1989 5 Philips Semiconductors Product specification UHF power transistor BLT92/SL handbook, full pagewidth 135 mm 70 mm +VCC L8 L5 C8 R2 R1 L4 L3 C7 C6 L7 L6 C5 L9 C9 C10 C11 C1 L1 C2 C4 L2 C3 C13 C14 L10 C12 MDA300 Fig.5 Printed circuit board and component layout for 900 MHz class-B test circuit. Note: The circuit and the components are on one side of the PTFE fibreglass board; the other side is un-etched copper serving as groundplane. Earth connections are made by hollow rivets and also by fixing-screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the groundplane. May 1989 6 Philips Semiconductors Product specification UHF power transistor BLT92/SL handbook, halfpage 5 MDA301 PL (W) 4 handbook, halfpage 10 Gp MDA302 Gp 100 C (%) 80 (dB) 8 Gp C 6 C 3 60 2 4 40 1 2 20 0 0 0.4 0.8 PS (W) 1.2 0 0 1 2 3 4 PL (W) f = 900 MHz; Tmb = 25 C; class-B operation; typical values. VCE = 7.5 V - - - VCE = 5.0 V 5 0 f = 900 MHz; Tmb = 25 C; class-B operation; typical values. VCE = 7.5 V - - - VCE = 5.0 V Fig.6 Load power as a function of source power. Fig.7 Power gain and efficiency as a function of load power. RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) at rated load power up to a supply voltage of 9.0 V at Tmb = 25 C. May 1989 7 Philips Semiconductors Product specification UHF power transistor BLT92/SL handbook, halfpage 10 MDA303 handbook, halfpage 5 MDA304 Zi () 8 xi ZL () 4 RL 6 ri 3 4 2 XL 2 1 0 750 800 850 900 950 1000 f (MHz) 0 750 800 850 900 950 1000 f (MHz) VCE = 7,5 V; PL = 3 W; f = 800 - 960 MHz; Tmb = 25 C; class-B operation; typical values. VCE = 7,5 V; PL = 3 W; f = 800 - 960 MHz; Tmb = 25 C; class-B operation; typical values. Fig.8 Input impedance as a function of frequency (series components). Fig.9 Load impedance as a function of frequency (series components). handbook, halfpage 10 MDA305 Gp (dB) 8 6 4 2 0 750 800 850 900 950 1000 f (MHz) VCE = 7,5 V; PL = 3 W; f = 800 - 960 MHz; Tmb = 25 C; class-B operation; typical values. Fig.10 Power gain as a function of frequency. May 1989 8 Philips Semiconductors Product specification UHF power transistor PACKAGE OUTLINE Studless ceramic package; 4 leads BLT92/SL SOT122D D A Q c D2 H b 4 L 3 H 1 2 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 4.17 3.27 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D2 7.24 6.98 H 27.56 25.78 L 9.91 9.14 Q 1.58 1.27 90 OUTLINE VERSION SOT122D REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 May 1989 9 Philips Semiconductors Product specification UHF power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLT92/SL This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1989 10 |
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